p-i-n DIODE PHASE SHIFTER IN WAVEGUIDE STRUCTURE

被引：3

作者：

Parnes, Michael ^{[1
]}

Vendik, Orest ^{[2
]}

机构：

[1] ASCOR Ltd, St Petersburg 197022, Russia

[2] St Petersburg Electrotech Univ, Dept Elect, St Petersburg 197376, Russia

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2015年 / 57卷 / 07期

关键词：

phase shifter; waveguide; p-i-n diode; switches;

D O I：

10.1002/mop.29157

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A calculation procedure is proposed to design the p-i-n diode phase shifter based on the waveguide transmission line. The laboratory sample of five-bit phase shifter designed using the proposed procedure was fabricated and measured at 32-36 GHz. It provides the following phase shifts bits: 11 degrees, 22 degrees, 45 degrees, 90 degrees, 180 degrees. (c) 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1666-1671, 2015

引用

页码：1666 / 1671

页数：6

共 16 条

[1] Avago Technologies, 2010, AN, V922, P5965
[2] P-I-N-DIODE CONTROL DEVICES IN E-PLANE TECHNIQUE
CALLSEN, H
MEINEL, HH
HOEFER, WJR
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (02) : 307 - 316
[3] CHANG K, 1985, IEEE MTT S INT S, P371
[4] FAST LOW-LOSS MICROSTRIP P-I-N PHASE-SHIFTER
GLANCE, B
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (01) : 14 - 16
[5] Gupta K. C., 1981, COMPUTER AIDED DESIG
[6] Kim Munho, 2009, Journal of Electromagnetic Engineering and Science, V9, P159
[7] Koul S. K., 1991, SEMICONDUCTOR DELAY
[8] Lowe K., 1993, European patent specification, Patent No. [0 357 955 B1, 235795]
[9] Lowe K., 1992, United States Patent, Patent No. [5,170,140, 5170140]
[10] Mailoux R.J., 1994, PHASED ARRAY ANTENNA

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