Surface Modification of Silicon Wafer by Low-Pressure High-frequency Plasma Chemical Vapor Deposition Method

被引：0

作者：

Kataoka, H. ^{[1
]}

Mungkung, N. ^{[2
]}

Yuji, T. ^{[3
]}

Kawano, M. ^{[3
]}

Kiyota, Y. ^{[3
]}

Uesugi, D. ^{[3
]}

Nakabayashi, K. ^{[3
]}

Suzaki, Y. ^{[4
]}

Shibata, H. ^{[5
]}

Kashihara, N. ^{[6
]}

Sakai, K. ^{[7
]}

Bouno, T. ^{[8
]}

Akatsuka, H. ^{[9
]}

机构：

[1] Minami Kyushu Jr Coll, Dept Int Liberal Arts, 5-1-2 Kirishima, Miyazaki 8800032, Japan

[2] King Mongkuts Univ Technol Thonburi, Dept Elect Technol Educ, Bangkok 10140, Thailand

[3] Miyazaki Univ, Fac Educ & Culture, Miyazaki 8892192, Japan

[4] Kagawa Univ, Dept Adv Mat Sci, Kagawa 7610396, Japan

[5] Hiroshima Natl Coll Maritime Technol, Dept Elect Control Engn, Hiroshima 7250231, Japan

[6] ADTEC Plasma Technol Co Ltd, Hiroshima 7210942, Japan

[7] Miyazaki Univ, Cooperat Res Ctr, Miyazaki 8892192, Japan

[8] Miyazaki Tech High Sch, Miyazaki 8808567, Japan

[9] Tokyo Inst Technol, Nucl Reactors Res Lab, Meguro Ku, Tokyo 1528550, Japan

来源：

ISDEIV 2010: XXIVTH INTERNATIONAL SYMPOSIUM ON DISCHARGES AND ELECTRICAL INSULATION IN VACUUM | 2010年

关键词：

SENSITIZED SOLAR-CELLS; HIGH-EFFICIENCY; LOW-COST; TIO2; FILMS; ELECTRODE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The writers are developing the production process device of thin-film material for the flexible solar cells using the high-frequency plasma chemical vapor deposition (CVD) method. In order to clarify the characteristics of the device, plasma treatment is applied on the Si wafer surface and basic characteristic of plasma is found by the analysis of the B doped p-type (100) Si wafer surface using X-ray photoelectron spectroscopy (XPS) and contact angle measuring gauge.

引用

页码：504 / 507

页数：4

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