Casting single crystal silicon:: Novel defect profiles from BP solar's mono2 TM wafers

被引：171

作者：

Stoddard, Nathan ^{[1
]}

Wu, Bei ^{[1
]}

Witting, Ian ^{[2
]}

Wagener, Magnus ^{[2
]}

Park, Yongkook ^{[2
]}

Rozgonyi, George ^{[2
]}

Clark, Roger ^{[1
]}

机构：

[1] Dept Technol, BP Solar,630 Solarex Court, Frederick, MD 21703 USA

[2] NC State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII | 2008年 / 131-133卷

关键词：

silicon; solar cells; defects; casting;

D O I：

10.4028/www.scientific.net/SSP.131-133.1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel crystal growth method has been developed for the production of ingots, bricks and wafers for solar cells. Monocrystallinity is achievable over large volumes with minimal dislocation incorporation. The resulting defect types, densities and interactions are described both microscopically for wafers and macroscopically for the ingot, looking closely at the impact of the defects on minority carrier lifetime. Solar cells of 156 cm(2) size have been produced ranging up to 17% in efficiency using industrial screen print processes.

引用

页码：1 / +

页数：2

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