A 140 GHz ft and 60 GHz fmax DTMOS integrated with high-performance SOI logic technology

被引：21

作者：

Momiyama, Y ^{[1
]}

Hirose, T ^{[1
]}

Kurata, H ^{[1
]}

Goto, K ^{[1
]}

Watanabe, Y ^{[1
]}

Sugii, T ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We integrated an RF-nMOSFET with 130-nm SOI high-end logic technology. Using the Dynamic Threshold structure (DTMOS) and channel engineering, we obtained a ft of 140 GHz and a fmax of 60 GHz when Vgs = 0.65 V and Vds = 1.5 V, while the logic CMOS showed Ion-Ioff characteristics better than those reported for SOI-CMOS devices. The RF characteristics were analyzed using a newly developed small-signal equivalent circuit model that has an additional current-source to express the body contribution of the DTMOS. These analyses revealed that channel engineering is important in improving RF performances.

引用

页码：451 / 454

页数：4

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