2D lattice formation by YAG:Nd laser on the surface of Ge single crystal

被引：10

作者：

Medvid, A

Fukuda, Y

Michko, A

Onufrievs, P

Anma, Y

机构：

[1] Riga Tech Univ, Lab Semicond Phys, LV-1048 Riga, Latvia

[2] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

来源：

APPLIED SURFACE SCIENCE | 2005年 / 244卷 / 1-4期

关键词：

self-organization; 2D lattice; YAG : Nd laser; Ge single crystal;

D O I：

10.1016/j.apsusc.2004.10.142

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Experimentally observed self-organization of a 2D lattice on the surface of Ge single crystal after irradiation by pulsed YAG:Nd laser is reported. The 2D lattice consists of nano-size elevations arranged in a pattern of C-6i point group symmetry and is characterized by translational symmetry with the period of 1 p,m. Calculations of time depended distribution of temperature in the bulk of the Ge sample are presented to explain the phenomenon. The calculations show that overheating of the crystal lattice occurs at laser radiation intensities exceeding 30 MW/cm(2). According to synergetic ideas, the presence of the non-equilibrium liquid phase of Ge and huge gradient of temperature (similar to 3 x 10(8) K/m) can lead to self-organization of the 2D lattice similar to Bernar's cells. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：120 / 123

页数：4

共 17 条

[1]

BIEGELSEN DK, 1985, ENERGY BEAM SOLID IN, V35

[2] LASER-INDUCED DEFECT FORMATION IN SEMICONDUCTORS [J].

EMELYANOV, VI ;

KASHKAROV, PK .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 55 (02) :161-166

[3]

GORY M, 2003, MAT SCI ENG B, P9

[4]

Haken H., 1983, Advanced Synergetics

[5]

JEFF F, 1984, PHYS REV B, V30, P2001

[6] Laser-induced treatment of silicon in air and formation of Si/SiOx photoluminescent nanostructured layers [J].

Kabashin, AV ;

Meunier, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 101 (1-3) :60-64

[7] PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON [J].

LIU, JM ;

KURZ, H ;

BLOEMBERGEN, N .

APPLIED PHYSICS LETTERS, 1982, 41 (07) :643-646

[8] Formation of nanostructures on surface of SiC by laser radiation [J].

Medvid, A ;

Fedorenko, L ;

Berzina, B ;

Yusupov, N ;

Lytvyn, P .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 101 (1-3) :155-158

[9] Redistribution of point defects in the crystalline lattice of a semiconductor in an inhomogeneous temperature field [J].

Medvid, A .

DEFECTS AND DIFFUSION IN SEMICONDUCTORS: ANNUAL RETROSPECTIVE V, 2002, 210-2 :89-101

[10] Controlling the quantum dot nucleation site [J].

Motta, N ;

Sgarlata, A ;

Rosei, F ;

Szkutnik, PD ;

Nufris, S ;

Scarselli, M ;

Balzarotti, A .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 101 (1-3) :77-88

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