Design of Waveguide Integrated Ge-Quantum-Well Electro-Absorption Modulators

被引：3

作者：

Zhao Hong-Wei ^{[1
]}

Hu Wei-Xuan ^{[1
]}

Xue Chun-Lai ^{[1
]}

Cheng Bu-Wen ^{[1
]}

Wang Qi-Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2011年 / 28卷 / 01期

基金：

中国国家自然科学基金;

关键词：

SILICON; PHOTODETECTORS; SI;

D O I：

10.1088/0256-307X/28/1/014204

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present two designs for a waveguide Ge-quantum-well electro-absorption modulator. In our designs, the strip SOI waveguides are butt-coupled and evanescent-coupled to the modulator, respectively. The proposed Ge-quantum-well electro-absorption modulator is based on quantum-confined Stark effect (QCSE), having a 3-dB bandwidth above 50 GHz, as well as a low switching power (around 60 fJ/bit at 1435 nm). In the butt-coupled design, the optimized extinction ratio is up to 11.4 dB, while the insertion loss is only 6.74 dB. For the second one, which utilizes evanescent coupling, the extinction ratio and insertion loss are 9.18 dB and 6.72 dB, respectively.

引用

页数：4

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