Analytical modeling of quantum threshold voltage for triple gate MOSFET

被引：17

作者：

Kumar, P. Rakesh ^{[1
]}

Mahapatra, Santanu ^{[1
]}

机构：

[1] Indian Inst Sci, Ctr Elect Design & Technol, Nano Scale Device Res Lab, Bangalore 560012, Karnataka, India

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 12期

关键词：

Compact modeling; Quantum threshold voltage; MOSFET; Device simulation;

D O I：

10.1016/j.sse.2010.07.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work a physically based analytical quantum threshold voltage model for the triple gate long channel metal oxide semiconductor field effect transistor is developed The proposed model is based on the analytical solution of two-dimensional Poisson and two-dimensional Schrodinger equation Proposed model is extended for short channel devices by including semi-empirical correction The impact of effective mass variation with film thicknesses is also discussed using the proposed model All models are fully validated against the professional numerical device simulator for a wide range of device geometries (C) 2010 Elsevier Ltd All rights reserved

引用

页码：1586 / 1591

页数：6

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