Deep vertical etching of silicon wafers using a hydrogenation-assisted reactive ion etching

被引：42

作者：

Sammak, Amir ^{[1
]}

Azimi, Soheil ^{[1
]}

Izadi, Nima ^{[1
]}

Hosseinieh, Bahar Khadem ^{[1
]}

Mohajerzadeh, Shams ^{[1
]}

机构：

[1] Univ Tehran, Thin Film & Nano Elect Lab, Dept Elect & Comp Engn, Tehran 14395, Iran

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 2007年 / 16卷 / 04期

关键词：

deep reactive ion etching (DRIE); hydrogen plasma; micromachining; silicon wafers; vertical etching;

D O I：

10.1109/JMEMS.2007.901123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel hydrogenation-assisted deep reactive ion etching of silicon is reported. The process uses sequential hydrogen-assisted passivation and plasma etching at low-density plasma powers to stimulate the vertical removal of the exposed Si substrate. The main feature of this technique is the sequential alternation of the electrodes while switching between different gases. Three-dimensional structures with aspect ratios in excess of 40: 1 and features as small as 0.7 mu m have been realized. The net etch rate is about 0.25 mu m/min, although higher rates are expected to be achievable.

引用

页码：912 / 918

页数：7

共 13 条

[1] Balancing the etching and passivation in time-multiplexed deep dry etching of silicon [J].

Blaw, MA ;

Zijlstra, T ;

van der Drift, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06) :2930-2934

[2] Surface micromachining for microelectromechanical systems [J].

Bustillo, JM ;

Howe, RT ;

Muller, RS .

PROCEEDINGS OF THE IEEE, 1998, 86 (08) :1552-1574

[3] Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures [J].

de Boer, MJ ;

Gardeniers, JGE ;

Jansen, HV ;

Smulders, E ;

Gilde, MJ ;

Roelofs, G ;

Sasserath, JN ;

Elwenspoek, M .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2002, 11 (04) :385-401

[4] Bulk micromachining of silicon [J].

Kovacs, GTA ;

Maluf, NI ;

Petersen, KE .

PROCEEDINGS OF THE IEEE, 1998, 86 (08) :1536-1551

[5] Challenges, developments and applications of silicon deep reactive ion etching [J].

Laermer, F ;

Urban, A .

MICROELECTRONIC ENGINEERING, 2003, 67-8 :349-355

[6]

Laermer F, 2005, Transducers '05, Digest of Technical Papers, Vols 1 and 2, P1118

[7]

Laermer F, 1996, U.S. Patent, Patent No. [5501893, US5501893A]

[8] Design and fabrication of silicon photonic crystal optical waveguides [J].

Loncar, M ;

Doll, T ;

Vuckovic, J ;

Scherer, A .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2000, 18 (10) :1402-1411

[9] Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures [J].

Marty, F ;

Rousseau, L ;

Saadany, B ;

Mercier, B ;

Francais, O ;

Mita, Y ;

Bourouina, T .

MICROELECTRONICS JOURNAL, 2005, 36 (07) :673-677

[10]

Murakami K., 1993, Proceedings. IEEE. Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.93CH3265-6), P65, DOI 10.1109/MEMSYS.1993.296953

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