Applicability of different models of energy bandgap and refractive index for chalcogenide thin films

被引:14
作者
Sharma, Ekta [1 ]
Sharma, Pankaj [1 ,2 ]
机构
[1] Jaypee Univ Informat Technol, Dept Phys & Mat Sci, Waknaghat 173234, Himachal Prades, India
[2] Natl Inst Tech Teachers Training & Res, Appl Sci Dept, Chandigarh 160019, India
关键词
Optical energy gap; Refractive index; Chalcogenide glasses; Thin films; Melt-Quench technique; MOSS; GAP; PARAMETERS;
D O I
10.1016/j.matpr.2020.01.342
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optical parameters are critical factors for the development of optoelectronic devices. Here the authors report the study of optical parameters based on some empirical relationship for Ga doped Ge- Te-Se. These relationships are based on the specific models proposed for the calculation of binary, tern- ary, and quaternary chalcogenide glasses for the specific range of energy gap. The empirically calculated values of optical parameters from these models are compared with the experimental value of the chalco- genide thin films. The values of refractive index have been calculated from the optical bandgap. Some relations proposed by different authors show good agreement between the experimental and calculated values. It has been concluded that Ravindra & Gupta, Reddy & Duffy, Kumar & Singh, and Reddy provide the satisfactory results. ? 2019 Elsevier Ltd. All rights reserved. Selection and Peer -review under responsibility of the scientific committee of the International Confer- ence on Advanced Materials and Nanotechnology.
引用
收藏
页码:92 / 95
页数:4
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