Characterization of SiC thin films grown on Si by inductively coupled plasma chemical vapor deposition at low temperatures

SiC thin film has been grown on Si(100) substrate by means of Inductively Coupled Plasma Chemical Vapor Deposition under experimental conditions of different growth temperatures, mass flow rates of SiH4 and CH4, and varied RF frequencies and powers. SiC samples were analyzed by FTIR EPMA and by TEM. We have achieved growth of SiC crystalline thin films at 200 degreesC with varying C/Si atomic ratios in grain size of 1 mum and growth rate of 2 mum per hour using an RF frequency of 51.2 MHz and increased RF plasma power.