Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes With Composition-Graded Configuration

被引：32

作者：

Chang, Jih-Yuan ^{[1
]}

Chang, Hui-Tzu ^{[2
]}

Shih, Ya-Hsuan ^{[3
]}

Chen, Fang-Ming ^{[2
]}

Huang, Man-Fang ^{[2
]}

Kuo, Yen-Kuang ^{[4
]}

机构：

[1] Natl Changhua Univ Educ, Ctr Teacher Educ, Changhua 500, Taiwan

[2] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

[3] Natl Cheng Kung Univ, Dept Photon, Tainan 701, Taiwan

[4] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 12期

关键词：

AlGaN; light-emitting diodes (LEDs); polarization effect; POLARIZATION;

D O I：

10.1109/TED.2017.2761404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Characteristics of deep-ultraviolet(DUV) light-emitting diodes (LEDs) are investigated. DUV LEDs possess severe electron current leakage due to insufficient carrier confinement of the active region. Simply increasing the Al composition of quantum barriers (QBs) or electron-blocking layer (EBL) to enlarge the relevant potential barrier height would arise unexpected detrimental effects, such as extra polarization effect or more obstruction for hole injection. In this paper, band-engineered composition-graded QBs and EBL are proposed to resolve this issue. Simulation results show that, with appropriate designs, the leakage current of DUV LEDs could be effectively diminished with just slight side effects.

引用

页码：4980 / 4984

页数：5

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