Process- and technology-independent power switching transistor figures of merit

被引:1
作者
McCune, Earl [1 ]
机构
[1] Panasonic, Santa Clara, CA USA
来源
2008 IEEE RADIO AND WIRELESS SYMPOSIUM, VOLS 1 AND 2 | 2008年
关键词
D O I
10.1109/RWS.2008.4463462
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
It is becoming important to properly choose among the many semiconductor switch technologies available when designing efficient high-speed power switches, due to required circuit energy efficiency improvements. In a world of wide bandwidth and high frequency signals, the desirable operating frequency of switch-mode circuitry increases correspondingly. This paper proposes two figures of merit (FoM) combining FET channel ON resistance with gate-charge and gate-source voltage to perform such comparisons. Beyond just comparison, one FoM is shown to be useful in design and evaluation of high speed, high power switches and their drivers. Using these comparisons, silicon FETs are shown to have a huge disadvantage for high speed switching applications including RF power amplifiers.
引用
收藏
页码:195 / 198
页数:4
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