Mechanisms of Current Flow in the Diode Structure with an n + -p-Junction Formed by Thermal Diffusion of Phosphorus From Porous Silicon Film

被引：2

作者：

Tregulov, V. V. ^{[1
]}

Litvinov, V. G. ^{[2
]}

Ermachikhin, A. V. ^{[2
]}

机构：

[1] Ryazan State Univ, Ryazan, Russia

[2] Ryazan State Radio Engn Univ, Ryazan, Russia

来源：

RUSSIAN PHYSICS JOURNAL | 2018年 / 60卷 / 09期

关键词：

porous silicon; p-n-junction; photoelectric converter; current-voltage characteristic; traps; energy levels;

D O I：

10.1007/s11182-018-1252-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Temperature dependences of current-voltage characteristics of the photoelectric converter with an antireflective film of porous silicon and an n (+) -p-junction formed by thermal diffusion of phosphorus from a porous film is studied. The porous silicon film was saturated with phosphorus during its growing by electrochemical method. It is shown that the current flow processes in the structure under study are significantly influenced by traps.

引用

页码：1565 / 1571

页数：7

共 10 条

[1]

Al-Hamdani A., 2016, J NANOSCI TECHNOL, P73

[2]

Canham L., 2014, HDB POROUS SILICON

[3] Effect of nanoporous silicon coating on silicon solar cell performance [J].

Dzhafarov, T. D. ;

Aslanov, S. S. ;

Ragimov, S. H. ;

Sadigov, M. S. ;

Yuksel, S. Aydin .

VACUUM, 2012, 86 (12) :1875-1879

[4]

Lampert M, 1973, INJECTION CURRENTS S

[5] The effects of surface modification on the electrical properties of p-n+ junction silicon nanowires grown by an aqueous electroless etching method [J].

Lee, Seulah ;

Koo, Ja Hoon ;

Seo, Jungmok ;

Kim, Sung-Dae ;

Lee, Kwang Hyun ;

Im, Seongil ;

Kim, Young-Woon ;

Lee, Taeyoon .

JOURNAL OF NANOPARTICLE RESEARCH, 2012, 14 (05)

[6]

Melnik N. N., 2015, P 6 ALL RUSS YOUTH C

[7]

Pasynkov V. V., 1987, Semiconductor devices

[8]

Rasheed B. G., 2010, J MAT SCI ENG, V4, P47

[9]

Sze S.M., 1984, PHYS SEMICONDUCTOR D, V2nd

[10]

Tregulov V. V., 2016, ZH TEKH FIZ, V86, P91

← 1 →