Three-dimensional system-in-package using stacked silicon platform technology

被引:54
作者
Kripesh, V
Yoon, SW
Ganesh, VP
Khan, N
Rotaru, MD
Fang, W
Iyer, MK
机构
[1] Inst Microelect, Singapore 117685, Singapore
[2] Inst High Performance Comp, Singapore 117528, Singapore
来源
IEEE TRANSACTIONS ON ADVANCED PACKAGING | 2005年 / 28卷 / 03期
关键词
three-dimensional system-in-package (3-D) SiP); stacked modules; through wafer interconnection; wafer thinning; integrated cooling solution;
D O I
10.1109/TADVP.2005.852895
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, a novel method of fabricating three-dimensional (3-D) system-in-package (SiP) using a silicon carrier that can integrate known good dice with an integrated cooling solution is presented. The backbone of this stacked module is the fabrication of a silicon carrier with through-hole conductive interconnects. The design, process, and assembly to fabricate silicon through-hole interconnect using a wet silicon etching method is discussed in this paper. The process optimization to fabricate silicon carriers with solder through-hole interconnect within the design tolerance has been achieved. The design and modeling methodology to optimize the package in terms of electrical aspects of the stacked module is carried out to achieve less interconnect parasitics. An integrated cooling solution for 3-D stacked modules using single-phase and two-phase cooling solutions is also demonstrated for high-power applications. Known good thin flip-chip devices with daisy chain are fabricated and attached to the silicon carrier by flip-chip processes making it a known good carrier after electrical testing. Individual known good carriers are vertically integrated to form 3-D SiP.
引用
收藏
页码:377 / 386
页数:10
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