High Tc ferroelectricity in V-doped ZnO nanorods

被引:39
作者
Gupta, Manoj Kumar [1 ]
Kumar, Binay [1 ]
机构
[1] Univ Delhi, Dept Phys & Astrophys, Crystal Lab, Delhi 110007, India
关键词
STRAIN;
D O I
10.1039/c1jm12107c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report the observation of a high ferroelectric Curie temperature (T-c similar to 345 degrees C) with a high remnant polarization (4.83 mu C cm(-2)) and low coercive field (5.43 kV cm(-1)) in V-doped ZnO nanorods (NR) synthesized by a low cost chemical route. Raman scattering analysis confirmed the formation of a wurzite structure with a good crystal quality and less structural defects in as-grown V-doped ZnO NR. The formation of non-collinear V-O bonds and their easy rotation under an electric field induces a switchable higher spontaneous polarization. The persistence of a better ferroelectric behaviour, even at 20 nm size and high T-c, in V-doped ZnO NR opens up new possibilities for high temperature nanopiezotronics applications of ZnO NR, including energy harvesting, which is a better option than lead-based or lead-free perovskite materials.
引用
收藏
页码:14559 / 14562
页数:4
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