Energetics of hydrogen in GeO2, Ge, and their interfaces

被引：11

作者：

Xiong, Ka ^{[1
]}

Lin, Liang ^{[2
]}

Robertson, John ^{[2
]}

Cho, Kyeongjae ^{[1
]}

机构：

[1] Univ Texas Dallas, Mat Sci & Engn Dept, Richardson, TX 75080 USA

[2] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

DIFFUSION; DEFECTS; STATES;

D O I：

10.1063/1.3610463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energetics of interstitial hydrogen in GeO2, Ge, and their interfaces are calculated using a hybrid density functional. We find that interstitial atomic hydrogen unexpectedly behaves as a donor in GeO2, like H in ZnO but unlike H in SiO2. At Ge:GeO2 interfaces, the donor electron can transfer to the lower lying Ge conduction band, which stabilises the O-H bond/donor complex. This reduces the probability of passivating Ge dangling bond (P-b) centers at Ge:GeO2 interfaces. (C) 2011 American Institute of Physics. [doi:10.1063/1.3610463]

引用

页数：3

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