Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination of T- and π-models up to 110GHz

被引：6

作者：

Zhang, Ao ^{[1
]}

Gao, Jianjun ^{[1
]}

Wang, Hong ^{[2
]}

机构：

[1] East China Normal Univ, Sch Phys & Elect Sci, Shanghai, Peoples R China

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2020年 / 35卷 / 02期

基金：

中国国家自然科学基金;

关键词：

parameter extraction; InP heterojunction bipolar transistor; modeling; millimeter waves; microwaves; EQUIVALENT-CIRCUIT MODEL; RESISTANCE; HBTS;

D O I：

10.1088/1361-6641/ab5917

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A parameter-extraction approach for determination of the small-signal equivalent circuit model for InP/InGaAs double heterojunction bipolar transistors is presented in this paper. This method combines the advantages of conventional T- and pi-type equivalent-circuit topologies. All the equivalent circuit elements are only extracted analytically from S-parameter data without any numerical optimization. The agreements between the measured and the model-calculated data are excellent in the frequency range of 0.1-110 GHz.

引用

页数：7

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