Effect of the seed crystallographic orientation on AlN bulk crystal growth by PVT method

被引：14
作者：
Wang, W. J. [1 ]
Zuo, S. B. [1 ]
Bao, H. Q. [2 ]
Wang, J. [1 ]
Jiang, L. B. [1 ]
Chen, X. L. [1 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Beijing Tankeblue Semicond Co Ltd, Beijing 100190, Peoples R China
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2011年 / 46卷 / 05期
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
nitrides; AlN; single crystal growth; growth from vapour; PHYSICAL VAPOR TRANSPORT; SUBLIMATION GROWTH; ALUMINUM NITRIDE;
D O I：
10.1002/crat.201100035
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The growth of AlN crystals by PVT method was investigated using TaC crucible in the temperature range of 2250-2350 degrees C. AlN boules with 30 mm in diameter were successfully grown on the crucible lid by self-seeded growth. The AlN boules consist of the spontaneously nucleated AlN single crystal grains with the {10 (1) over bar0} natural crystalline face. The fast growth rate of more than 1 mm/h was achieved. AlN crystals grown on (11 (2) over bar0)-, (10 (1) over bar0)-, and (0001)-face AlN seeds were investigated. Different experimental phenomena have been observed under particular condition. The crystal grown on (11 (2) over bar0)-face seed has different natural crystalline face from the seed. For the crystal grown on (10 (1) over bar0) or (0001) seed, the crystal natural crystalline face is same as the crystallographic orientation of the seed. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：455 / 458
页数：4
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