Effect of the seed crystallographic orientation on AlN bulk crystal growth by PVT method

被引:14
|
作者
Wang, W. J. [1 ]
Zuo, S. B. [1 ]
Bao, H. Q. [2 ]
Wang, J. [1 ]
Jiang, L. B. [1 ]
Chen, X. L. [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Beijing Tankeblue Semicond Co Ltd, Beijing 100190, Peoples R China
基金
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词
nitrides; AlN; single crystal growth; growth from vapour; PHYSICAL VAPOR TRANSPORT; SUBLIMATION GROWTH; ALUMINUM NITRIDE;
D O I
10.1002/crat.201100035
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The growth of AlN crystals by PVT method was investigated using TaC crucible in the temperature range of 2250-2350 degrees C. AlN boules with 30 mm in diameter were successfully grown on the crucible lid by self-seeded growth. The AlN boules consist of the spontaneously nucleated AlN single crystal grains with the {10 (1) over bar0} natural crystalline face. The fast growth rate of more than 1 mm/h was achieved. AlN crystals grown on (11 (2) over bar0)-, (10 (1) over bar0)-, and (0001)-face AlN seeds were investigated. Different experimental phenomena have been observed under particular condition. The crystal grown on (11 (2) over bar0)-face seed has different natural crystalline face from the seed. For the crystal grown on (10 (1) over bar0) or (0001) seed, the crystal natural crystalline face is same as the crystallographic orientation of the seed. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:455 / 458
页数:4
相关论文
共 50 条
  • [1] AlN bulk crystal growth by sublimation method
    Kato, Tomohisa
    Nagai, Ichiro
    Miura, Tomonori
    Kamata, Hiroyuki
    Naoe, Kunihiro
    Sanada, Kazuo
    Okumura, Hajime
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
  • [2] The Physical Vapor Transport Method for Bulk AlN Crystal Growth
    Chen, Wen-Hao
    Qin, Zuo-Yan
    Tian, Xu-Yong
    Zhong, Xu-Hui
    Sun, Zhen-Hua
    Li, Bai-Kui
    Zheng, Rui-Sheng
    Guo, Yuan
    Wu, Hong-Lei
    MOLECULES, 2019, 24 (08)
  • [3] Modelling and simulation of oxygen transport during AlN crystal growth by the PVT method
    Fu, Danyang
    Wang, Qikun
    Zhang, Gang
    Zhu, Ruzhong
    Liu, Huan
    Li, Zhe
    Wu, Liang
    JOURNAL OF CRYSTAL GROWTH, 2020, 551 (551)
  • [4] Growth and Stress Analysis of Spontaneous Nucleationc-Plane Bulk AlN Crystals by a PVT Method
    Wang, Guodong
    Zhang, Lei
    Wang, Yong
    Shao, Yongliang
    Chen, Chengmin
    Liu, Guangxia
    Yao, Xiaogang
    Wu, Yongzhong
    Hao, Xiaopeng
    CRYSTAL RESEARCH AND TECHNOLOGY, 2020, 55 (10)
  • [5] SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen
    Hartmann, Carsten
    Albrecht, Martin
    Wollweber, Juergen
    Schuppang, Josephine
    Juda, Uta
    Guguschev, Christo
    Golka, Sebastian
    Dittmar, Andrea
    Fornari, Roberto
    JOURNAL OF CRYSTAL GROWTH, 2012, 344 (01) : 19 - 26
  • [6] Crystallographic orientation and strain distribution in AlN seeds grown on 6H-SiC substrates by the PVT method
    Yao, Xiaogang
    Wang, Guodong
    Tu, Huayao
    Liu, Shengfu
    Yang, Mingzhi
    Kong, Zhen
    Shao, Yongliang
    Wu, Yongzhong
    Hao, Xiaopeng
    CRYSTENGCOMM, 2021, 23 (28) : 4946 - 4953
  • [7] Growth kinetics and thermal stress in AlN bulk crystal growth
    Wu, B
    Ma, RH
    Zhang, H
    Dudley, M
    Schlesser, R
    Sitar, Z
    JOURNAL OF CRYSTAL GROWTH, 2003, 253 (1-4) : 326 - 339
  • [8] Growing AlN crystals on SiC seeds: Effects of growth temperature and seed orientation
    Hu, Weijie
    Guo, Liwei
    Guo, Yunlong
    Wang, Wenjun
    JOURNAL OF CRYSTAL GROWTH, 2020, 541 (541)
  • [9] Dependance of hot-zone position on AlN single crystal growth by PVT method
    Yin, Gyong-Phil
    Kang, Seung-Min
    JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2016, 26 (02): : 84 - 88
  • [10] Numerical Simulation and Experimental Research on AlN Crystal Initial Growth by Homoepitaxial PVT Method
    Huang Jiali
    Wang Qikun
    He Guangdong
    Lei Dan
    Fu Danyang
    Gong Jianchao
    Ren Zhongming
    Deng Kang
    Wu Liang
    RARE METAL MATERIALS AND ENGINEERING, 2019, 48 (10) : 3209 - 3214