Basics of floating-gate low-dropout voltage regulators

被引：0
|
作者：
Low, A [1 ]
Hasler, P [1 ]
机构：
[1] Georgia Inst Technol, Atlanta, GA 30332 USA
来源：
PROCEEDINGS OF THE 43RD IEEE MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS I-III | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an overview of series voltage regulators, beginning with single-transistor designs and exploring the various design issues and concepts. The regulating characteristics of nFET and pFET single-transistor regulators are compared analytically and experimentally to determine an optimal starting topology. The design of these simple regulators is taken a step further by applying floating-gate techniques to improve the flexibility of the existing design and the ability to customize the regulator bias points.
引用
收藏
页码：1048 / 1051
页数：4
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