Nanostructured graded-index antireflection layer formation on GaN for enhancing light extraction from light-emitting diodes

被引：11

作者：

Dylewicz, R. ^{[1
]}

Khokhar, A. Z. ^{[1
]}

Wasielewski, R. ^{[2
]}

Mazur, P. ^{[2
]}

Rahman, F. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Wroclaw, Inst Expt Phys, PL-50204 Wroclaw, Poland

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2012年 / 107卷 / 02期

关键词：

REFRACTIVE-INDEX; OPTICAL-PROPERTIES; SILICON; ENHANCEMENT; COATINGS; DESIGN; GROWTH; FILMS; ARRAY;

D O I：

10.1007/s00340-012-5017-6

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We describe the fabrication and characterization of a randomly etched gallium nitride (GaN) surface for enhancing light extraction from light-emitting diodes. Our technique uses silica spheres as nano-targets in a sputter-etch process and produces a fine-grained surface with features around 35 nm. The textured surface layer acts as a graded refractive index layer with antireflection properties. Measurements show that photoluminescence intensity from such treated surfaces on a GaN LED wafer increases 2.2 times over that from pristine surfaces. These findings are also supported by computer modelling studies described here.

引用

页码：393 / 399

页数：7

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