The zinc-loss effect and mobility enhancement of DUV-patterned sol-gel IGZO thin-film transistors

被引：8

作者：

Wang, Kuan-Hsun ^{[1
]}

Zan, Hsiao-Wen ^{[1
]}

Soppera, Olivier ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Coll Elect & Comp Engn, Dept Photon, 1001 Univ Rd, Hsinchu 300, Taiwan

[2] Univ Haute Alsace, CNRS, Inst Sci Mat Mulhouse, IS2M,UMR 7361, 15 Rue Jean Starcky, F-68057 Mulhouse, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2018年 / 33卷 / 03期

关键词：

sol-gel; IGZO; DUV; photo-patterning; zinc loss; LOW-TEMPERATURE; SIMULTANEOUS ULTRAVIOLET; OXIDE; PERFORMANCE; FABRICATION;

D O I：

10.1088/1361-6641/aaa611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the composition of the DUV-patterned sol-gel indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) and observe a significant zinc loss effect during developing when the DUV exposure is insufficient. The zinc loss, however, is beneficial for increasing the mobility. Reducing zinc to indium composition ratio from 0.5 to 0.02 can effectively increase mobility from 0.27 to 7.30 cm(2) V-1 s (-1) when the gallium to indium ratio is fixed as 0.25 and the post annealing process is fixed as 300 degrees C for 2 h. On the other hand, an IGO TFT fails to deliver a uniform film and a reproducible TFT performance, revealing the critical role of zinc in forming homogeneous IGZO TFTs.

引用

页数：6

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