Diffusion of Water Molecules in Amorphous Silica

被引:18
作者
Kostinski, Sarah [1 ]
Pandey, Ravindra [2 ]
Gowtham, S. [2 ]
Pernisz, Udo [3 ]
Kostinski, Alexander [2 ]
机构
[1] Harvard Univ, Cambridge, MA 02138 USA
[2] Michigan Technol Univ, Houghton, MI 49931 USA
[3] Dow Corning Corp, Midland, MI 48686 USA
基金
美国国家科学基金会;
关键词
Amorphous silica (a-SiO2); diffusion; thin film; water vapor; DENSITY; GLASS; SIO2;
D O I
10.1109/LED.2012.2189750
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The diffusive penetration of atmospheric water vapor into amorphous silica (a-SiO2) degrades the performance of electronic devices. In this letter, we calculate the range of activation energies for water diffusion in a-SiO2 such that the diffusion time through, for example, a 0.5-mu m protective layer is on the order of the decadal time scale, as required in typical applications. We find that for all practical purposes, silica composed of n-member rings is impenetrable to water vapor for n <= 5. Thus, we conclude that the distribution of n-member rings in a-SiO2 and, specifically, the n > 5 fraction is the critical parameter for predicting device performance.
引用
收藏
页码:863 / 865
页数:3
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