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Microstructures of FeTaN films in the neck region of magnetic recording heads
被引:2
|作者:
Hong, J
Wang, SX
机构:
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
关键词:
Fe-based nitride magnetic materials;
head sliders;
high-saturation-moment magnetic materials;
inductive recording heads;
oblique-incident deposition;
D O I:
10.1109/20.947059
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We found that the columns at the neck region of a magnetic recording inductive head slider composed of FeTaN and NiFe are tilted from the surface normal when the pole materials are sputtered at a low substrate bias power. The electron diffraction patterns show that (110) texture has not strongly developed in the FeTaN film. We have not observed noticeable voids throughout the film on the slider, which suggests the absence of microshape anisotropy. This observation is consistent with our previous study of FeTaN blanket films. We confirmed lattice distortion in the FeTaN due to Th and N incorporation into a Fe matrix. No significant difference in microstructure between the film on the head slider and the blanket film is found. Based on all the information we have gathered, such as X-ray spectra, pole figures, and high-resolution electron micrographs, we established the crystallographic relationship between (110) orientation, columnar direction, and incident atomic flux in the case of oblique-incident deposition of FeTaN films.
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页码:3039 / 3042
页数:4
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