The tunneling potential for field emission from nanotips

被引:13
作者
Biswas, Debabrata [1 ,2 ]
Ramachandran, Rajasree [1 ]
Singh, Gaurav [1 ,2 ]
机构
[1] Bhabha Atom Res Ctr, Bombay 400085, Maharashtra, India
[2] Homi Bhabha Natl Inst, Bombay 400094, Maharashtra, India
关键词
ATOMICALLY SHARP EMITTERS; ELECTRON-EMISSION; VALIDITY;
D O I
10.1063/1.5009059
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
In the quasi-planar approximation of field emission, the potential energy due to an external electrostatic field E-0 is expressed as -e gamma E-0 Delta s, where Delta s is the perpendicular distance from the emission site and gamma is the local field enhancement factor on the surface of the emitter. We show that for curved emitter tips, the current density can be accurately computed if terms involving (Delta s/R-2)(2) and (Delta s/R-2)(3) are incorporated in the potential where R-2 is the second (smaller) principle radius of curvature. The result is established analytically for the hemiellipsoid and hyperboloid emitters, and it is found that for sharply curved emitters, the expansion coefficients are equal and coincide with that of a sphere. The expansion seems to be applicable to generic emitters as demonstrated numerically for an emitter with a conical base and quadratic tip. The correction terms in the potential are adequate for R-a greater than or similar to 2 nm for local field strengths of 5 V/nm or higher. The result can also be used for nano-tipped emitter arrays or even a randomly placed bunch of sharp emitters. Published by AIP Publishing.
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页数:8
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