Application of through Silicon vias on Millimeter-Wave Silicon Based Antenna

被引：0

作者：

Zhou Dali ^{[1
]}

Yang Jiapeng ^{[1
]}

Zhou Jun ^{[1
,2
]}

Shen Ya ^{[1
]}

机构：

[1] NEDI, Nanjing, Jiangsu, Peoples R China

[2] Sci & Technol Monolith Integrated Circuits & Modu, Nanjing, Jiangsu, Peoples R China

来源：

2017 2ND IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM) | 2017年

关键词：

through silicon vias; rectangular resonant cavity; silicon based antenna; millimeter wave; gain; bandwidth;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Through silicon vias (TSVs) are arranged to form a rectangular resonant cavity to improve performance of silicon based antenna in this paper. On the basis of fundamental theory of rectangular resonant cavity, the model of cavity made of through silicon vias is analyzed. Considering the size of millimeter-wave antenna, the three dimensions of cavity for mode TE101 is calculated. Applying the resonant cavity on coplanar waveguide (CPW) coupled slot antenna, a new frequency is generated which can lead to dual bands or a wider bandwidth. And the radiation gain can be improved by 1.9dB. So the application of through silicon via on improving performances of silicon based antenna is effective enough.

引用

页码：321 / 325

页数：5

共 14 条

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