Response to "Comment on 'The effects of Si doping on dislocation movement and tensile stress in GaN films'" [J. Appl. Phys. 109, 073509 (2011)]

被引：3

作者：

Moram, M. A. ^{[1
]}

Kappers, M. J. ^{[1
]}

Massabuau, F. ^{[1
]}

Oliver, R. A. ^{[1
]}

Humphreys, C. J. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

THIN-FILMS; STRAIN; GROWTH;

D O I：

10.1063/1.3656431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页数：2

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