Revised method for extraction of the thermal resistance applied to bulk and SOISiGeHBTs

被引：44

作者：

Vanhoucke, T ^{[1
]}

Boots, HAJ ^{[1
]}

van Noort, WD ^{[1
]}

机构：

[1] Philips Res Leuven, B-3001 Louvain, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 03期

关键词：

heterojunction bipolar transistors (HBTs); self-heating silicon-on-insulator (SOI) technology; thermal resistance;

D O I：

10.1109/LED.2004.824242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A revision is presented of the technique to determine the junction temperature and thermal resistance of bipolar transistors. It is based on the temperature sensitivity of the base-emitter voltage when biasing the device under constant emitter current. It accounts correctly for the self-heating of the device during the measurement. Results are obtained for devices fabricated on silicon-on-insulator (SOI) and bulk silicon having different emitter widths and lengths. An increment of the thermal resistance is found for SOI devices with respect to bulk.

引用

页码：150 / 152

页数：3

共 11 条

[1]

BRELSFORD K, 2001, P INT INT REL WORKSH, P78

[2]

Donkers JJTM, 2003, BCTM PROC, P111

[3] Thermal effects in HBT emitter resistance extraction [J].

Hanington, G ;

Chang, CE ;

Zampardi, PJ ;

Asbeck, PM .

ELECTRONICS LETTERS, 1996, 32 (16) :1515-1516

[4]

HOFMANN K, 2002, INTEGRATED RELIABILI, P79

[5] Thermal resistance in Si1-xGexHBTs on bulk-Si and SOI substrates [J].

Palestri, P ;

Pacelli, A ;

Mastrapasqua, M .

PROCEEDINGS OF THE 2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2001, :98-101

[6] Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors [J].

Rieh, JS ;

Greenberg, D ;

Jagannathan, B ;

Freeman, G ;

Subbanna, S .

2001 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2001, :110-113

[7]

Sze S.M., 2013, SEMICONDUCTOR DEVICE

[8] Simultaneous extraction of thermal and emitter series resistances in bipolar transistors [J].

Tran, H ;

Schroter, M ;

Walkey, DJ ;

Marchesan, D ;

Smy, TJ .

PROCEEDINGS OF THE 1997 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1997, :170-173

[9]

van Noort WD, 2003, IEEE BIPOL BICMOS, P129

[10] Thermal parameter extraction technique using DC I-V data for HBT transistors [J].

Williams, D ;

Tasker, P .

2000 HIGH FREQUENCY POSTGRADUATE STUDENT COLLOQUIUM, 2000, :71-75

← 1 2 →