A revolution in lighting

被引:1027
作者
Pust, Philipp [1 ]
Schmidt, Peter J. [2 ]
Schnick, Wolfgang [1 ]
机构
[1] Univ Munich, LMU, Dept Chem, D-81377 Munich, Germany
[2] Philips GmbH, Lumileds Dev Ctr Aachen, D-52068 Aachen, Germany
关键词
P-TYPE GAN; LUMINESCENCE; PHOSPHOR; ELECTROLUMINESCENCE; RECOMBINATION; GROWTH; DIODES;
D O I
10.1038/nmat4270
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Key materials discoveries have prompted the rise of inorganic light-emitting diodes in the lighting industry. Remaining challenges are being addressed to further extend the impact of this technology in lighting, displays and other applications.
引用
收藏
页码:454 / 458
页数:5
相关论文
共 39 条
[1]  
AKASAKI I, 1991, J LUMIN, V48-9, P666
[2]   P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].
AMANO, H ;
KITO, M ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114
[3]   METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].
AMANO, H ;
SAWAKI, N ;
AKASAKI, I ;
TOYODA, Y .
APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355
[4]   ELECTRON-BEAM EFFECTS ON BLUE LUMINESCENCE OF ZINC-DOPED GAN [J].
AMANO, H ;
AKASAKI, I ;
KOZAWA, T ;
HIRAMATSU, K ;
SAWAKI, N ;
IKEDA, K ;
ISHII, Y .
JOURNAL OF LUMINESCENCE, 1988, 40-1 :121-122
[5]  
[Anonymous], 2014, EN SAV FOR SOL STAT
[6]  
[Anonymous], 2012, Lighting the way: Perspectives on the global lighting market, V2nd
[7]  
Bando K., 1998, J LIGHT VIS ENVIRON, V22, P2, DOI DOI 10.2150/JLVE.22.1_2
[8]   RADIATIVE TRANSITIONS IN SEMICONDUCTORS [J].
BRAUNSTEIN, R .
PHYSICAL REVIEW, 1955, 99 (06) :1892-1893
[9]   RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].
CRAFORD, MG ;
SHAW, RW ;
HERZOG, AH ;
GROVES, WO .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4075-&
[10]  
Evstratyeva K, 2014, MARKET OVERVIEW GLOB