XANES and IR Spectroscopy Study of the Electronic Structure and Chemical Composition of Porous Silicon on n- and p-Type Substrates

被引：34

作者：

Lenshin, A. S. ^{[1
]}

Kashkarov, V. M. ^{[1
]}

Seredin, P. V. ^{[1
]}

Spivak, Yu. M. ^{[2
]}

Moshnikov, V. A. ^{[2
]}

机构：

[1] Voronezh State Univ, Voronezh 394006, Russia

[2] LETI St Petersburg State Electrotech Univ, St Petersburg 197376, Russia

来源：

SEMICONDUCTORS | 2011年 / 45卷 / 09期

关键词：

Porous Silicon; Type Substrate; Metal Insulator Semiconductor; Porous Silicon Sample; Silicon Hydride;

D O I：

10.1134/S1063782611090168

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The differences in the electronic structure and composition of porous silicon samples obtained under identical conditions of electrochemical etching on the most commonly used n- and p-type substrates with different conductivities are demonstrated by X-ray absorption near-edge spectroscopy (XANES) and Fourier transform IR spectroscopy (FTIR) methods. It is shown that significantly higher oxidation and saturation with hydrogen is observed for the porous layer on n-type substrates. DOI: 10.1134/S1063782611090168

引用

页码：1183 / 1188

页数：6

共 22 条

[1]

[Anonymous], 1971, ULTRASOFT XRAY SPECT

[2]

[Anonymous], 2001, NON STRUCT COMP CHAR

[3]

[Anonymous], 2001, PURE APPL CHEM, V73, P381

[4] Synchrotron investigations of the specific features in the electron energy spectrum of silicon nanostructures [J].

Domashevskaya, ÉP ;

Terekhov, VA ;

Kashkarov, VM ;

Manukovskii, ÉY ;

Turishchev, SY ;

Molodtsov, SL ;

Vyalykh, DV ;

Khokhlov, AF ;

Mashin, AI ;

Shengurov, VG ;

Svetlov, SP ;

Chalkov, VY .

PHYSICS OF THE SOLID STATE, 2004, 46 (02) :345-350

[5] XPS, USXS and PLS investigations of porous silicon [J].

Domashevskaya, EP ;

Kashkarov, VM ;

Manukovskii, EY ;

Shchukarev, AV ;

Terekhov, VA .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1998, 88 :969-972

[6] Formation and application of porous silicon [J].

Föll, H ;

Christophersen, M ;

Carstensen, J ;

Hasse, G .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2002, 39 (04) :93-141

[7] Simultaneous changes in the photoluminescence, infrared absorption and morphology of porous silicon during etching by HF [J].

Gorbach, TY ;

Rudko, GY ;

Smertenko, PS ;

Svechnikov, SV ;

Valakh, MY ;

Bondarenko, VP ;

Dorofeev, AM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (04) :601-606

[8]

Gremlich H.-U., 2002, IR SPECTROSCOPY INTR

[9]

Kanageeva Yu. M., 2007, PETERB ZH ELEKT, V1, P35

[10] Electron structure of porous silicon obtained without the use of HF acid [J].

Kashkarov, Vladimir ;

Nazarikov, Igor ;

Lenshin, Alexander ;

Terekhov, Vladimir ;

Turishchev, Sergey ;

Agapov, Boris ;

Pankov, Konstantin ;

Domashevskaya, Evelina .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 7, 2009, 6 (07) :1557-1560

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