A 220 GHz (G-Band) microstrip MMIC single-ended resistive mixer

被引：24

作者：

Gunnarsson, Sten E. ^{[1
]}

Wadefalk, Niklas ^{[1
]}

Angelov, Tcho ^{[1
]}

Zirath, Herbert ^{[1
,2
]}

Kallfass, Inginar ^{[3
]}

Letither, Arnulf ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

[2] Ericsson AB, Microwave & High Speed Elect Res Ctr, SE-43184 Molndal, Sweden

[3] Faraunhofe Inst Appl Solid State Phys IAF, D-79108 Freiburg, Germany

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2008年 / 18卷 / 03期

关键词：

GaAs; G-band; imaging; mHEMT; microstrip; millimeter-wave; monolithic microwave integrated circuit (MMIC); single-ended resistive mixer; 220; GHz;

D O I：

10.1109/LMWC.2008.916819

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the design and characterization of a 220 GHz microstrip monolithic microwave integrated circuit single-ended resistive mixer in a 0.1 mu m GaAs mHEMT technology. A conversion loss as low as 8.7 dB is obtained, limited by the available local oscillator (LO) power (1.5 dBm) in the measurement setup. The radio frequency (RF) bandwidth is also limited by the measurement setup, but the mixer demonstrates a flat response over the measured 200 to 220 GHz frequency range. Furthermore, measured intermediate frequency bandwidth, 1-dB input compression point, LO-to-RF isolation, and reflection coefficients are presented and discussed.

引用

页码：215 / 217

页数：3

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