Nitridation of InP(100) surface studied by AES and EELS spectroscopies

被引:7
作者
Ould-Metidji, Y [1 ]
Bideux, L
Matolin, V
Gruzza, B
Robert, C
机构
[1] Univ Blaise Pascal, LASMEA, UMR CNRS 6602, F-63177 Aubiere, France
[2] Charles Univ, Dept Elect & Vacuum Phys, CR-18000 Prague 8, Czech Republic
关键词
indium phosphide; nitridation; AES; EELS;
D O I
10.1016/S0042-207X(01)00196-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nitridation of indium phosphide (100) substrates has been studied using Auger electron spectroscopy and electron energy loss spectroscopy. After ionic etching by Ar+ ions, metallic indium crystallites are created, and the nitridation of the substrate is performed using a plasma glow discharge cell. We have found that N atoms lead to the desorption of the phosphorus diffused on the surface and the formation of a mixed (In + N) layer on the top of the substrate. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
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页码:229 / 232
页数:4
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