Synthesis and optical characterization of c-axis oriented GaN thin films on amorphous quartz glass via sol-gel process

被引：16

作者：

Sinha, Godhuli ^{[1
]}

Adhikary, Kalyan ^{[1
]}

Chaudhuri, Subhadra ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, India

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 16期

关键词：

GaN; gallium oxide; nanocrystals; thin films; c-axis orientation; photoluminescence;

D O I：

10.1016/j.apsusc.2008.02.033

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

c-Axis oriented GaN nanocrystalline thin films were fabricated by nitridation of three different thin films of alpha-GaO(OH), alpha-Ga2O3 or beta-Ga2O3 obtained by sol-gel technique on amorphous quartz glass substrates. All these GaN thin films showed near band edge emission at 390 nm and yellow luminescence at 570 nm. The crystalline nature and c-axis orientation as well as luminescence properties of the GaN thin films increased by several times by using a buffer layer of GaN on the substrate. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：5257 / 5260

页数：4

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