Synthesis and optical characterization of c-axis oriented GaN thin films on amorphous quartz glass via sol-gel process

被引：16

作者：

Sinha, Godhuli ^{[1
]}

Adhikary, Kalyan ^{[1
]}

Chaudhuri, Subhadra ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, India

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 16期

关键词：

GaN; gallium oxide; nanocrystals; thin films; c-axis orientation; photoluminescence;

D O I：

10.1016/j.apsusc.2008.02.033

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

c-Axis oriented GaN nanocrystalline thin films were fabricated by nitridation of three different thin films of alpha-GaO(OH), alpha-Ga2O3 or beta-Ga2O3 obtained by sol-gel technique on amorphous quartz glass substrates. All these GaN thin films showed near band edge emission at 390 nm and yellow luminescence at 570 nm. The crystalline nature and c-axis orientation as well as luminescence properties of the GaN thin films increased by several times by using a buffer layer of GaN on the substrate. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：5257 / 5260

页数：4

共 27 条

[1] EFFECTS OF THE BUFFER LAYER IN METALORGANIC VAPOR-PHASE EPITAXY OF GAN ON SAPPHIRE SUBSTRATE [J].

AMANO, H ;

AKASAKI, I ;

HIRAMATSU, K ;

KOIDE, N ;

SAWAKI, N .

THIN SOLID FILMS, 1988, 163 :415-420

[2] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[3] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[4] Synthesis routes and characterization of high-purity, single-phase gallium nitride powders [J].

Balkas, CM ;

Davis, RF .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (09) :2309-2312

[5]

BAUER E, 1964, SINGLE CRYSTAL FILMS, P43

[6] Optimized growth conditions for the epitaxial nucleation of beta-GaN on GaAs(001) by molecular beam epitaxy [J].

Brandt, O ;

Yang, H ;

Trampert, A ;

Wassermeier, M ;

Ploog, KH .

APPLIED PHYSICS LETTERS, 1997, 71 (04) :473-475

[7] Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3 [J].

He, MQ ;

Minus, I ;

Zhou, PZ ;

Mohammed, SN ;

Halpern, JB ;

Jacobs, R ;

Sarney, WL ;

Salamanca-Riba, L ;

Vispute, RD .

APPLIED PHYSICS LETTERS, 2000, 77 (23) :3731-3733

[8] Vibrational and optical properties of GaN nanowires synthesized by Ni-assisted catalytic growth [J].

Ji, Hangfeng ;

Kuball, Martin ;

Burke, Robert A. ;

Redwing, Joan M. .

NANOTECHNOLOGY, 2007, 18 (44)

[9] Preparation and optical properties of prism-shaped GaN nanorods [J].

Jian, JK ;

Chen, XL ;

Tu, QY ;

Xu, YP ;

Dai, L ;

Zhao, M .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (32) :12024-12026

[10] Effect of an indium-tin-oxide overlayer on transparent Ni/Au ohmic contact on p-type GaN [J].

Kim, SY ;

Jang, HW ;

Lee, JL .

APPLIED PHYSICS LETTERS, 2003, 82 (01) :61-63

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