1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic ON-Resistance

被引：329

作者：

Chu, Rongming ^{[1
]}

Corrion, Andrea ^{[1
]}

Chen, Mary ^{[1
]}

Li, Ray ^{[1
]}

Wong, Danny ^{[1
]}

Zehnder, Daniel ^{[1
]}

Hughes, Brian ^{[1
]}

Boutros, Karim ^{[1
]}

机构：

[1] HRL Labs, Malibu, CA 90265 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 05期

关键词：

Dynamic ON-resistance; field-effect transistor; field plate; GaN; gate insulator; power switch; PLATE; POWER; GANHEMTS; HEMTS;

D O I：

10.1109/LED.2011.2118190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off operation. Atomic layer deposition of Al(2)O(3) gate insulator was adopted to reduce the gate leakage current. Incorporation of multiple field plates, with one field plate connected to the gate electrode and two field plates connected to the source electrode successfully enabled a high breakdown voltage of 1200 V and low dynamic ON-resistance at high-voltage operation.

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页码：632 / 634

页数：3

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