Contact resistance in top-gated graphene field-effect transistors

被引：59

作者：

Huang, Bo-Chao ^{[1
]}

Zhang, Ming ^{[1
]}

Wang, Yanjie ^{[1
]}

Woo, Jason ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 03期

关键词：

PLANAR DEVICES; METAL CONTACTS; MOBILITY; FILMS;

D O I：

10.1063/1.3614474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The parasitic resistance of different source/drain metals for top-gated graphene field-effect transistors was extracted by fitting the measured I-D-V-G data with a resistance model and was found to be a significant part of the total resistance of graphene field-effect transistors. The results show that Ti/Au gives relatively large contact resistance, about 7500 Omega.mu m. Ni/Au contact shows better result compared to Ti/Au, which is around 2100 Omega.mu m. The lowest contact resistance was given by Ti/Pd/Au, which is around 750 Omega.mu m. The contact resistivity for Ti/Pd/Au source/drain contact is around 2 x 10(-6) Omega.cm(2), close to state of the art GaAs technology. (C) 2011 American Institute of Physics. [doi:10.1063/1.3614474]

引用

页数：3

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