First-Principles Study on Formation and Electron-Transport Properties of Single Oligothiophene Molecular Junctions

被引:24
作者
Li, Zong-Liang [1 ]
Zhang, Guang-Ping [1 ]
Wang, Chuan-Kui [1 ]
机构
[1] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China
基金
中国国家自然科学基金;
关键词
CONDUCTANCE; METAL; VOLTAGE; MODULATION; RESISTANCE; CHEMISTRY; BEHAVIOR; SAMS;
D O I
10.1021/jp200017x
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this work, the formation of single oligothiophene molecular junctions was studied using density functional theory. The elastic scattering Green's function method was applied to investigate the electron-transport properties of the molecular junctions and their conductance switching properties caused by an electrochemical gate. Given four configurations, the optimized structures and breakdown forces of the molecular junctions were obtained. The breakdown of the oligothiophene molecular junctions is likely to occur at the Au-S bond as the electrodes are pulled. The simulated results show that the experimental findings that the four-repeating-unit oligothiophene is more conductive than the three-repeating-unit oligothiophene are due to their different configurations. The oligothiophenes' electronic structures are sensitive to the gate field, and their conductance switching properties are explained when a gate field is applied.
引用
收藏
页码:15586 / 15591
页数:6
相关论文
共 55 条
[1]   Transistor-like behavior of transition metal complexes [J].
Albrecht, T ;
Guckian, A ;
Ulstrup, J ;
Vos, JG .
NANO LETTERS, 2005, 5 (07) :1451-1455
[2]   Resistive and rectifying effects of pulling gold atoms at thiol-gold nanocontacts [J].
Batista, Ronaldo J. C. ;
Ordejon, Pablo ;
Chacham, Helio ;
Artacho, Emilio .
PHYSICAL REVIEW B, 2007, 75 (04)
[3]   Contact resistance in metal-molecule-metal junctions based on aliphatic SAMs: Effects of surface linker and metal work function [J].
Beebe, JM ;
Engelkes, VB ;
Miller, LL ;
Frisbie, CD .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2002, 124 (38) :11268-11269
[4]   Density-functional method for nonequilibrium electron transport -: art. no. 165401 [J].
Brandbyge, M ;
Mozos, JL ;
Ordejón, P ;
Taylor, J ;
Stokbro, K .
PHYSICAL REVIEW B, 2002, 65 (16) :1654011-16540117
[5]   Temperature-dependent statistical behavior of single molecular conductance in aqueous solution [J].
Cao, Hui ;
Jiang, Jun ;
Ma, Jing ;
Luo, Yi .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (21) :6674-+
[6]   Forming single molecular junctions between indium tin oxide electrodes [J].
Chen, Fang ;
Huang, Zhifeng ;
Tao, Nongjian .
APPLIED PHYSICS LETTERS, 2007, 91 (16)
[7]   Large on-off ratios and negative differential resistance in a molecular electronic device [J].
Chen, J ;
Reed, MA ;
Rawlett, AM ;
Tour, JM .
SCIENCE, 1999, 286 (5444) :1550-1552
[8]   Mechanism for negative differential resistance in molecular electronic devices: Local orbital symmetry matching [J].
Chen, Lan ;
Hu, Zhenpeng ;
Zhao, Aidi ;
Wang, Bing ;
Luo, Yi ;
Yang, Jinlong ;
Hou, J. G. .
PHYSICAL REVIEW LETTERS, 2007, 99 (14)
[9]   Measurement of the conductance of single conjugated molecules [J].
Dadosh, T ;
Gordin, Y ;
Krahne, R ;
Khivrich, I ;
Mahalu, D ;
Frydman, V ;
Sperling, J ;
Yacoby, A ;
Bar-Joseph, I .
NATURE, 2005, 436 (7051) :677-680
[10]   Length-dependent transport in molecular junctions based on SAMs of alkanethiols and alkanedithiols: Effect of metal work function and applied bias on tunneling efficiency and contact resistance [J].
Engelkes, VB ;
Beebe, JM ;
Frisbie, CD .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2004, 126 (43) :14287-14296