V-pits formation in InGaN/GaN: influence of threading dislocations and indium content

被引：6

作者：

Matejova, Jana Stranska ^{[1
]}

Hospodkova, Alice ^{[2
]}

Kosutova, Tereza ^{[1
]}

Hubacek, Tomas ^{[2
]}

Hyvl, Matej ^{[2
]}

Holy, Vaclav ^{[1
,3
]}

机构：

[1] Charles Univ Prague, Fac Math & Phys, Ke Karlovu 3, Prague 12116, Czech Republic

[2] Inst Phys AS CR, Vvi, Cukrovarnicka 10, Prague 16200, Czech Republic

[3] Masaryk Univ, CEITEC, Koltarska 2, Brno 61137, Czech Republic

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2022年 / 55卷 / 25期

关键词：

V-pits; InGaN; GaN; dislocations; x-ray diffraction; diffuse scattering; XRD; RSM; X-RAY-DIFFRACTION; VAPOR-PHASE EPITAXY; STRAIN RELAXATION; GAN; ZINCBLENDE; WURTZITE; DEFECTS; CENTERS; SURFACE;

D O I：

10.1088/1361-6463/ac5c1a

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two sets of InGaN/GaN MOVPE-grown samples were studied by high-resolution x-ray diffraction techniques together with statistical analysis of atomic force microscope images in order to determine the impact of In concentration and threading dislocations (TDs) density on the V-pit formation. It was shown that in our samples, the density of V-pits in the epilayer matched the TD density with a screw component in the substrate. Pure edge TDs do not affect the V-pit density. The In concentration influences the size of the V-pits, but not their density.

引用

页数：15

共 56 条

[1] The effect of polarity on MOCVD growth of thick InGaN [J].

Al Balushi, Zakaria Y. ;

Redwing, Joan M. .

APPLIED PHYSICS LETTERS, 2017, 110 (02)

[2] X-ray diffuse scattering from threading dislocations in epitaxial GaN layers [J].

Barchuk, M. ;

Holy, V. ;

Miljevic, B. ;

Krause, B. ;

Baumbach, T. ;

Hertkorn, J. ;

Scholz, F. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (04)

[3] Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy [J].

Bazioti, C. ;

Papadomanolaki, E. ;

Kehagias, Th. ;

Walther, T. ;

Smalc-Koziorowska, J. ;

Pavlidou, E. ;

Komninou, Ph. ;

Karakostas, Th. ;

Iliopoulos, E. ;

Dimitrakopulos, G. P. .

JOURNAL OF APPLIED PHYSICS, 2015, 118 (15)

[4] Pit formation in GaInN quantum wells [J].

Chen, Y ;

Takeuchi, T ;

Amano, H ;

Akasaki, I ;

Yamano, N ;

Kaneko, Y ;

Wang, SY .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :710-712

[5] Microstructure of heteroepitaxial GaN revealed by x-ray diffraction [J].

Chierchia, R ;

Böttcher, T ;

Heinke, H ;

Einfeldt, S ;

Figge, S ;

Hommel, D .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) :8918-8925

[6] COMPARISON OF DISLOCATION DENSITIES OF PRIMARY AND SECONDARY RECRYSTALLIZATION GRAINS OF SI-FE [J].

DUNN, CG ;

KOCH, EF .

ACTA METALLURGICA, 1957, 5 (10) :548-554

[7] CAPILLARY EQUILIBRIA OF DISLOCATED CRYSTALS [J].

FRANK, FC .

ACTA CRYSTALLOGRAPHICA, 1951, 4 (06) :497-501

[8] Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption [J].

Gao, Zhi-Yuan ;

Xue, Xiao-Wei ;

Li, Jiang-Jiang ;

Wang, Xun ;

Xing, Yan-Hui ;

Cui, Bi-Feng ;

Zou, De-Shu .

CHINESE PHYSICS B, 2016, 25 (06)

[9] THE ESTIMATION OF DISLOCATION DENSITIES IN METALS FROM X-RAY DATA [J].

GAY, P ;

HIRSCH, PB ;

KELLY, A .

ACTA METALLURGICA, 1953, 1 (03) :315-319

[10] Metal organic vapour phase epitaxy of GaN and lateral overgrowth [J].

Gibart, P .

REPORTS ON PROGRESS IN PHYSICS, 2004, 67 (05) :667-715

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