Interface trap generation in MOS transistors at high current densities

被引：1

作者：

Neugroschel, A ^{[1
]}

Sah, CT ^{[1
]}

Cao, W ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 19期

关键词：

D O I：

10.1049/el:19981312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new interface trap generation pathway is demonstrated in MOS transistors; The pathway is due to the electrical activation or dehydrogenation of the electronic traps at the SiO2/Si interface via chemical reduction by atomic hydrogen released From the interconnect during high-current density low-voltage stress.

引用

页码：1889 / 1891

页数：3

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