HRTEM observation of interface states between ZnO epitaxial film and Si(111) substrate

被引:10
作者
Nakanishi, Y
Miyake, A
Tatsuoka, H
Kominami, H
Kuwabara, H
Hatanaka, Y
机构
[1] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
[2] Shizuoka Univ, Grad Sch Elect Sci & Technol, Hamamatsu, Shizuoka 4328011, Japan
[3] Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 4328561, Japan
[4] Aichi Univ Technol, Aichi 4430047, Japan
关键词
ZnO; ZnS; Si; thin film; epitaxial growth; annealing; interface state; exciton; photoluminescence;
D O I
10.1016/j.apsusc.2004.10.091
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
ZnO epitaxial thin films could be formed by oxidation of ZnS epitaxial thin films deposited on Si substrates by electron-beam evaporation. The orientation relation of the ZnO film was (0002), [11-20]ZnO//(111), [1-10]Si. The ZnS films were oxidized from its surface toward the surface of the Si substrate gradually. The ZnS film with a thickness of about 100 nm was completely changed to ZnO by annealing at 720 degrees C for 10 min in O-2 atmosphere. By excess annealing, longer than 30 min, an intermediate layer was formed at the interface between the ZnO layer and Si(111) substrate. Exciton emission with a peak at 3.27 eV from ZnO became dominant and visible emission due to oxygen vacancy in ZnO disappeared by the annealing of the film at 800 degrees C for 5 h in O-2 flow. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:359 / 364
页数:6
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