Singlet oxygen formation by porous Si in solution

被引:9
作者
Fujii, M [1 ]
Usui, M
Hayashi, S
Gross, E
Kovalev, D
Künzner, N
Diener, J
Timoshenko, VY
机构
[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Rokkodai, Nada 6578501, Japan
[2] Tech Univ Munich, Phys Dept E16, D-85747 Garching, Germany
[3] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119992, Russia
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 08期
关键词
D O I
10.1002/pssa.200461107
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Singlet oxygen formation by porous Si in solution has been demonstrated. It has been shown that the absorption band of 1,3-diphenylisobenzofuran (DPBF) in benzene becomes smaller, i.e., DPBF is degraded, by irradiating green or red light if the powder of fresh porous Si is dispersed in the solution. The effect was drastically suppressed by the formation of a monolayer of backbonded oxide at the surface of nanocrystals. The degradation was accelerated when the solution was bubbled with oxygen gas. These results indicate that electronic excitation of Si nanocrystals is transferred to molecular oxygen dissolved in solution, resulting in the formation of singlet oxygen. Generated singlet oxygen reacts with DPBF, forming endoperoxides, which in turn decompose to yield irreversible products. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1385 / 1389
页数:5
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