Effect of oxygen vacancies on the electrical properties of Bi6Ti5TeO22 thin film

被引：4
作者：
Choi, Chang-Hak [1 ]
Choi, Joo-Young [1 ]
Cho, Kyung-Hoon [1 ]
Yoo, Myong-Jae [1 ]
Nahm, Sahn [1 ]
Kang, Chong-Yun [2 ]
Yoon, Seok-Jin [2 ]
Kim, Jong-Hee [3 ]
机构：
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
[2] Korea Inst Sci & Technol, Thin Film Mat Res Ctr, Seoul 136791, South Korea
[3] Korea Inst Ceram Engn & Technol, Fus Technol Div, Seoul 153801, South Korea
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 11期
关键词：
D O I：
10.1149/1.2976795
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Bi(6)Ti(5)TeO(22) film grown under a low oxygen pressure (OP) of 0.21 Pa showed a low breakdown field of 0.25 MV/cm which increased with increasing the OP to 0.60 MV/cm for the film grown under the OP of 0.59 Pa. The breakdown field decreased when the OP exceeded 0.59 Pa, due to the formation of oxygen interstitial ions. A small amount of Mn doping also increased the breakdown field of the Bi(6)Ti(5)TeO(22) films grown under a low OP. These improvements were related to the decreased number of intrinsic oxygen vacancies identified by the variation of metallic telluride states in the photoemission spectra of the Te 3d level. (C) 2008 The Electrochemical Society.
引用
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页码：G51 / G54
页数：4
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