Ultra-low lattice thermal conductivity and promising thermoelectric figure of merit in borophene via chlorination

被引:38
作者
He, Jia [1 ]
Hu, Yanxiao [2 ]
Li, Dengfeng [2 ]
Chen, Jie [1 ]
机构
[1] Tongji Univ, Sch Phys Sci & Engn, China EU Joint Lab Nanophonon, Ctr Phonon & Thermal Energy Sci, Shanghai 200092, Peoples R China
[2] Chongqing Univ Posts & Telecommun, Sch Sci, Chongqing 400065, Peoples R China
基金
中国国家自然科学基金;
关键词
borophene; thermal transport; thermoelectric figure of merit; density functional theory; gas atom functionalization; TRANSPORT; GRAPHENE; HYDROGENATION;
D O I
10.1007/s12274-021-3908-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Monolayer boron-based materials are of current interests due to its polymorphism. Herein, motivated by the recent experimental synthesis of semiconducting hydrogenated alpha'-borophene and the regulation of the physical properties in layered materials by surface functionalization, we study the thermal and electronic properties of alpha'-borophene with three different types of gas functional groups (H, F, and Cl) based on first-principles and Boltzmann transport theory. It is found that alpha'-borophene can be well stabilized by fluorination and chlorination and maintain the semiconductor nature. More interestingly, when hydrogen is replaced with fluorine or chlorine, the lattice thermal conductivity changes from 24.3 to 5.2 or 0.73 W/(m.K) along armchair direction at 300 K, exhibiting a huge reduction by two orders of magnitude. The main reason is the decrease of both phonon group velocities and acoustic phonon relaxation time resulting from the strong phonon mode softening due to the weaken B-B bond strength and heavier atomic mass of fluorine and chlorine. Consequently, the chlorinated alpha'-borophene exhibits a high thermoelectric figure of merit similar to 2 at 300 K along armchair direction. Our study illustrates the importance of the modulation of transport properties by gas functional groups, which may promote the thermoelectric application of boron-based materials.
引用
收藏
页码:3804 / 3811
页数:8
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