Thin carbon nitride films deposited by laser ablation with an XeCl excimer laser

被引：0

作者：

Luches, A ^{[1
]}

D'Anna, E ^{[1
]}

Leggieri, G ^{[1
]}

Martino, M ^{[1
]}

Perrone, A ^{[1
]}

Majni, G ^{[1
]}

Mengucci, P ^{[1
]}

Gyorgy, E ^{[1
]}

Mihailescu, IN ^{[1
]}

Popescu, M ^{[1
]}

机构：

[1] Ist Nazl Fis Nucl, I-73100 Lecce, Italy

来源：

ALT '97 INTERNATIONAL CONFERENCE ON LASER SURFACE PROCESSING | 1998年 / 3404卷

关键词：

carbon nitride; laser ablation; thin films; excimer lasers;

D O I：

10.1117/12.308600

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Carbon nitride films were deposited on < 111 > Si substrates by pulsed laser ablation of graphite targets in low pressure (1-50 Pa) N-2 atmosphere. The irradiations were performed with an XeCl excimer laser at the fluences of 12 and 16 J/cm(2). Many different diagnostic techniques (SEM, RES, XPS, XRD, TEM) have been applied to characterize the deposited layers. The deposition rate decreases with increasing ambient pressure. The N/C atomic ratio into the deposited films generally increases with increasing ambient pressure and laser fluence. N/C values up to 0.7 were inferred from the RES spectra. There are evidences of the formation of quite large crystals, which have grown almost epitaxially on the < 111 > Si substrate. Heating of the substrates during depositions causes a reduction of the N/C ratio. Optical emission spectra of the laser plasma plume have been recorded and analyzed, to try to correlate plasma characteristics with the composition of the deposited films.

引用

页码：91 / 98

页数：8