High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

被引：79

作者：

Cheng, Kai ^{[1
,2
]}

Leys, M. ^{[1
]}

Degroote, S. ^{[1
]}

Germain, M. ^{[1
]}

Borghs, G. ^{[1
,3
]}

机构：

[1] IMEC, NEXT, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, ESAT, Louvain, Belgium

[3] Katholieke Univ Leuven, Dept Phys, Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 19期

关键词：

D O I：

10.1063/1.2928224

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality GaN layers with dislocation density of (3.0 +/- 0.5) X 10(8)/cm(2) have been grown on silicon(111) substrates using a combination of AlGaN intermediate layers and a SixNy interlayer. A smooth and fully coalesced layer was obtained by virtue of a high temperature growth process which accelerates coalescence and improves at the same time the crystalline quality. This was confirmed by high resolution x-ray diffraction showing a full width of half maximum of 415 arc sec for the asymmetric (-2201) rocking curve. (C) 2008 American Institute of Physics.

引用

页数：3

共 25 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[2] Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers [J].

Cheng, K ;

Leys, M ;

Degroote, S ;

Van Daele, B ;

Boeykens, S ;

Derluyn, J ;

Germain, M ;

Van Tendeloo, G ;

Engelen, J ;

Borghs, G .

JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (04) :592-598

[3] AlGaN/GaN high electron mobility transistors grown on 150 mm Si(111) substrates with high uniformity [J].

Cheng, Kai ;

Leys, Maarten ;

Degroote, Stefan ;

Derluyn, Joff ;

Sijmus, Brian ;

Favia, Paola ;

Richard, Olivier ;

Bender, Hugo ;

Germain, Marianne ;

Borghs, Gustaaf .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (03) :1553-1555

[4] AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4 [J].

Cheng, Kai ;

Leys, M. ;

Derluyn, J. ;

Degroote, S. ;

Xiao, D. P. ;

Lorenz, A. ;

Boeykens, S. ;

Germain, M. ;

Borghs, G. .

JOURNAL OF CRYSTAL GROWTH, 2007, 298 :822-825

[5] Relaxation of compressively-strained AlGaN by inclined threading dislocations [J].

Follstaedt, DM ;

Lee, SR ;

Provencio, PP ;

Allerman, AA ;

Floro, JA ;

Crawford, MH .

APPLIED PHYSICS LETTERS, 2005, 87 (12) :1-3

[6] The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy [J].

Haffouz, S ;

Lahrèche, H ;

Vennéguès, P ;

de Mierry, P ;

Beaumont, B ;

Omnès, F ;

Gibart, P .

APPLIED PHYSICS LETTERS, 1998, 73 (09) :1278-1280

[7] Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers [J].

Kappers, M. J. ;

Datta, R. ;

Oliver, R. A. ;

Rayment, F. D. G. ;

Vickers, M. E. ;

Humphreys, C. J. .

JOURNAL OF CRYSTAL GROWTH, 2007, 300 (01) :70-74

[8] Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage [J].

Kim, S ;

Oh, J ;

Kang, J ;

Kim, D ;

Won, J ;

Kim, JW ;

Cho, HK .

JOURNAL OF CRYSTAL GROWTH, 2004, 262 (1-4) :7-13

[9] Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence [J].

Koleske, DD ;

Fischer, AJ ;

Allerman, AA ;

Mitchell, CC ;

Cross, KC ;

Kurtz, SR ;

Figiel, JJ ;

Fullmer, KW ;

Breiland, WG .

APPLIED PHYSICS LETTERS, 2002, 81 (11) :1940-1942

[10] Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth [J].

Lahrèche, H ;

Vennéguès, P ;

Beaumont, B ;

Gibart, P .

JOURNAL OF CRYSTAL GROWTH, 1999, 205 (03) :245-252

← 1 2 3 →