Temperature dependence of carrier mobility in undoped and gadolinium-doped p-GaSe crystals

被引：11

作者：

Abdinov, A. Sh. ^{[1
]}

Babaeva, R. F. ^{[2
]}

Rzaev, R. M. ^{[1
]}

Amirova, S. I. ^{[1
]}

机构：

[1] Baku State Univ, AZ-1145 Baku, Azerbaijan

[2] Azerbaijani State Econ Univ, AZ-1000 Baku, Azerbaijan

来源：

INORGANIC MATERIALS | 2012年 / 48卷 / 06期

关键词：

Gallium compounds - Gadolinium - Layered semiconductors - Temperature distribution;

D O I：

10.1134/S0020168512060015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the temperature dependence of carrier mobility (mu) in undoped and gadolinium-doped -GaSe crystals. The results demonstrate that, in the temperature range 77-420 K, the carrier mobility in high-resistivity -GaSeaOE (c) Gd > crystals increases at low temperatures as a power law. At high temperatures, mu(T) has a maximum and varies roughly as T-3/2. In addition, mu is a nonmonotonic function of gadolinium content. The observed anomalies in the temperature dependence of carrier mobility in the crystals studied are due to partial disorder in these materials. The present experimental data can be interpreted in terms of a two-barrier energy-band model of partially disordered semiconductors.

引用

页码：559 / 562

页数：4

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