Positive oxide charge-enhanced read disturb in a localized trapping storage flash memory cell

被引：14
作者：
Tsai, WJ [1 ]
Yeh, CC
Zous, NK
Liu, CC
Cho, SK
Wang, TH
Pan, SC
Lu, CY
机构：
[1] Macronix Int Co Ltd, Hsinchu, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 03期
关键词：
cycling-induced oxide charges; Flash EEPROM; hot-carrier effect; MXVAND; NROM; PHINES; positive charge-assisted electron tunneling; read disturb; poly-silicon-oxide-nitride-oxide-silicon; (SONOS); tunnel detrapping; threshold voltage (V-t) instability;
D O I：
10.1109/TED.2003.822869
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Read disturb-induced erase-state threshold voltage instability in a localized trapping storage Flash memory cell with a poly-silicon-oxide-nitride-oxide-silicon (SONOS) structure is investigated and reported. Our results show that positive trapped charge in bottom oxide generated during program/erase (P/E) cycles play a major role. Both gate voltage and drain voltage will accelerate the threshold voltage (V-t) drift. Hot-carrier caused disturb effect is more severe in a shorter gate length device at low temperature. A model of positive charge-assisted electron tunneling into a trapping nitride is proposed. Influence of channel doping on the V-t drift is studied. As the cell is in an "unbiased" storage mode, tunnel detrapping of positive oxide charges is responsible for the threshold voltage shift, which is insensitive to temperature.
引用
收藏
页码：434 / 439
页数：6
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