Pyrrole adsorption on GaAs(001)-c(4x4): The role of surface defects

被引:4
作者
Bruhn, Thomas [1 ,2 ]
Fimland, Bjorn-Ove [3 ]
Esser, Norbert [1 ,2 ]
Vogt, Patrick [1 ]
机构
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Leibniz Inst Analyt Wissensch ISAS eV, D-12489 Berlin, Germany
[3] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, NO-7491 Trondheim, Norway
关键词
SCANNING-TUNNELING-MICROSCOPY; SEMICONDUCTOR SURFACES; RECONSTRUCTIONS; ANISOTROPY; GAAS(100); FUNCTIONALIZATION; CYCLOPENTENE; MOLECULES; CHEMISTRY; PYRIDINE;
D O I
10.1103/PhysRevB.85.075322
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the adsorption mechanism of pyrrole on the As-rich GaAs(001)-c(4 x 4) surface. We present measurements with reflectance anisotropy spectroscopy, x-ray photoelectron spectroscopy, and high-resolution scanning tunneling microscopy and spectroscopy (STS) and our experiments show that the surface defects play a crucial role for the adsorption configuration. We found that pyrrole physisorbs on the ideal c(4 x 4) surface and does not form any covalent bonds to the surface atoms. At submonolayer coverage, however, we found evidence for single molecules that are chemisorbed at surface defects. We could identify the molecular electronic states with single molecule STS and could distinguish the chemisorbed and physisorbed molecular species in the STS spectra.
引用
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页数:6
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