Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies

被引：10

作者：

Tsang, JC ^{[1
]}

Fischetti, MV ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 9-10期

关键词：

D O I：

10.1016/S0026-2714(01)00194-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The intensity of the hot-carrier light emission from advanced CMOS technologies will not decrease significantly below present levels in the next several years even as operating voltages approach 1V. Hot-luminescence techniques for circuit characterization such as PICA will remain viable over this period. The effect on the emission intensity of the decreasing operating voltages and device dimensions is dominated by the dependence of the hot-carrier distribution on voltage. Calculations of hot-electron distribution functions for small nFETs including Coulomb scattering from the source and drain show that the distribution functions for energies greater than 1 eV will only decrease slightly as operating voltages scale to below I V. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1465 / 1470

页数：6

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