Indium-Zinc-Oxide Electric-Double-Layer Thin-Film Transistors for Artificial Synapse Applications

被引：0
|
作者：
Zhu, Li Qiang [1 ]
机构：
[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
来源：
2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2014年
关键词：
Laterally Coupling; Electric-Double-Layer; Synaptic transistor;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Phosphorous-doped nanogranular SiO2 gated laterally coupled indium-zinc-oxide electric-double-layer synaptic transistors are self-assembled on glass substrate. A strong electric-double-layer effect is observed. Synaptic functions, such as excitatory postsynaptic currents (EPSC) and paired-pulse facilitation (PPF) are mimicked on the proposed IZO synaptic transistor. The time scales of the PPF behaviors are similar to that observed in biological synapse. The proposed synaptic transistors are meaningful for neuron bionics.
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页数：2
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