Growth and characterization of Ta-doped Ga2O3 films deposited by magnetron sputtering

被引：29

作者：

Shang, Yi ^{[1
]}

Tang, Ke ^{[1
]}

Chen, Zhuorui ^{[1
]}

Zhang, Zhiluo ^{[1
]}

Deng, Jie ^{[1
]}

Hu, Yan ^{[1
]}

Gu, Keyun ^{[1
]}

Cao, Meng ^{[1
]}

Wang, Linjun ^{[1
]}

Huang, Jian ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 134卷

关键词：

Ta-doped Ga2O3 films; Magnetron sputtering; Seed layer; Electrical properties; BETA-GA2O3; SI; STABILITY; SURFACE;

D O I：

10.1016/j.mssp.2021.106040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In recent years, Ga2O3 has attracted extensive attention at home and abroad due to its excellent properties. In this paper, Ta-doped Ga2O3 films were grown on quartz substrates by magnetron sputtering technique. Effects of substrate temperature and seed layer on the performance of the films were investigated. The results showed that all films had uniform, smooth surface morphology and better transparency (>85%) in the wavelength region of 300-800 nm. Hall effect measurement revealed low resistivity of 0.089 Omega cm and high carrier concentration of 2.4 x 10(19) cm(-3) for the Ta-doped Ga2O3 film grown with seed layer. XPS spectra demonstrated that Ta was incorporated into the Ga2O3 films and Ta5+ ions were obtained.

引用

页数：7

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